Ef6821cmb c datasheet 2n3904

Ef6821cmb c datasheet 2n3904

The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW. Its transition frequency F t is 250 MHz, with a beta of at least 100. The complementary NPN transistor to the 2N3906 is the 2N3904. Both types were registered by Motorola Semiconductor in the mid-1960s. 2N3904 Datasheet, 2N3904 PDF, 2N3904 Data sheet, 2N3904 manual, 2N3904 pdf, 2N3904, datenblatt, Electronics 2N3904, alldatasheet, free, datasheet, Datasheets, data ... The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW. Its transition frequency F t is 250 MHz, with a beta of at least 100. The complementary NPN transistor to the 2N3906 is the 2N3904. Both types were registered by Motorola Semiconductor in the mid-1960s.

C Collector Current - Continuous 200 mA T J, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 2001 Fairchild Semiconductor Corporation Thermal Characteristics T A = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3904 *MMBT3904 **PZT3904 P D Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8 ... Offer EF6821CMB/C ST from Kynix Semiconductor Hong Kong Limited.IC Chips Turn–On TimeIC, COLLECTOR CURRENT (mA)70100200300500 datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors.

@ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RθJA 200 °C/W Thermal ... @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RθJA 200 °C/W Thermal ...

C Collector Current - Continuous 200 mA T J, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 2001 Fairchild Semiconductor Corporation Thermal Characteristics T A = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3904 *MMBT3904 **PZT3904 P D Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8 ... 2N3904 Central Semiconductor Bipolar Transistors - BJT NPN Gen Pur SS datasheet, inventory, & pricing. 2N3904 datasheet, 2N3904 datasheets, 2N3904 pdf, 2N3904 circuit : PHILIPS - NPN switching transistor ,alldatasheet, datasheet, Datasheet search site for Electronic ...

2N3903, 2N3904 General Purpose Transistors ... dimensions section on page 3 of this data sheet. ORDERING INFORMATION COLLECTOR 3 2 BASE 1 EMITTER 2N 390x YWW x = 3 or 4

1 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit ... Order today, ships today. 2N3904-AP – Bipolar (BJT) Transistor NPN 40V 200mA 250MHz 600mW Through Hole TO-92 from Micro Commercial Co. Pricing and Availability on millions of electronic components from Digi-Key Electronics. May 28, 2018 · C828 Transistor Datasheet - NPN Toshiba, C828 Transistor, 2SC828 datasheet, pdf, C828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference. KST-9010-00012N3904NPN Silicon TransistorDescriptions• General small signal application• Switching applicationFeatures• Low collector saturation voltage• Collector output capacitance datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. 2N3904 Transistor and Specifications. 2N3904 Datasheet. 2N3904 Circuits. The 2N3904 is common general-purpose low-power NPN transistor used amplifying or switching applications. It is typically used for low-current, medium voltage, and moderate speed purposes. 2n3904 small signal npn transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the pnp complementary type is

2N3904 datasheet, 2N3904 datasheets, 2N3904 pdf, 2N3904 circuit : ONSEMI - General Purpose Transistors(NPN Silicon) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Compare pricing for ON Semiconductor 2N3904 across 12 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. 2n3904 / mmbt3904 / pzt3904 — npn general-purpose amplifier ... function, or design. to obtain the latest, most up-to-date datasheet and product information, visit our All Transistors Datasheet. Cross Reference Search. Transistor Database. Offer EF6821CMB/C ST from Kynix Semiconductor Hong Kong Limited.IC Chips

2004 Jan 12 8 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2N3904/2N3906 Datasheet, 2N3904/2N3906 PDF, 2N3904/2N3906 Data sheet, 2N3904/2N3906 manual, 2N3904/2N3906 pdf, 2N3904/2N3906, datenblatt, Electronics 2N3904/2N3906 ...

May 28, 2018 · C828 Transistor Datasheet - NPN Toshiba, C828 Transistor, 2SC828 datasheet, pdf, C828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference. All Transistors Datasheet. Cross Reference Search. Transistor Database. All Transistors Datasheet. Cross Reference Search. Transistor Database.

Order today, ships today. 2N3904-AP – Bipolar (BJT) Transistor NPN 40V 200mA 250MHz 600mW Through Hole TO-92 from Micro Commercial Co. Pricing and Availability on millions of electronic components from Digi-Key Electronics. The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW. Its transition frequency F t is 250 MHz, with a beta of at least 100. The complementary NPN transistor to the 2N3906 is the 2N3904. Both types were registered by Motorola Semiconductor in the mid-1960s.

Turn–On TimeIC, COLLECTOR CURRENT (mA)70100200300500 datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW. Its transition frequency F t is 250 MHz, with a beta of at least 100. The complementary NPN transistor to the 2N3906 is the 2N3904. Both types were registered by Motorola Semiconductor in the mid-1960s. 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements.

Aug 30, 2017 · bc549, bc636, bc639, 2n2222 to-92, 2n2222 to-18, 2n2369, 2n3055, 2n3904, 2n3906, 2sc5200 Brief Description on BC547 BC547 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N3905 Datasheet (PDF) 1.1. 2n3905 2n3906.pdf Size:199K _motorola. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 ...